CVD of SiC and AlN Using Cyclic Organometallic Precursors

Abstract

AbstractThe use of cyclic organometallic molecules as single-source MOCVD precursors is illustrated by means of examples taken from our recent work on SiC and AlN deposition, with particular focus on SiC. Molecules containing (SiC)2 and (AlN)3 rings as the “core structure” were employed as the source materials for these studies. The organoaluminum amide, [Me2AlNH2]3, was used as the AlN source and has been studied in a molecular beam sampling apparatus in order to determine the gas phase species present in a hot-wall CVD reactor environment. In the case of SiC CVD, a series of disilacyclobutanes, [Si(XX′)CH2]2 (with X and X′ - H, CH3 , and CH2 SiH2CH3), were examined in a cold-wall, hot-stage CVD reactor in order to compare their relative reactivities and prospective utility as single-source CVD precursors. The parent compound, disilacyclobutane, [SiH2 CH2]2, was found to exhibit the lowest deposition temperature (ca. 670 °C) and to yield the highest purity SiC films. This precursor gave a highly textured, polycrystalline film on the Si(100) substrates (70% with a SiC<lll> orientation).