Abstract
Semiconducting films such as Si and GaAs used in ICs depend on their crystallographic perfection to produce the device performance demanded of them. In theory, the growth of single-crystal thin films to match the substrate lattice, or epitaxy, is possible through most common methods of thin film deposition, such as evaporation, PVD, and CVD. However, CVD, liquid phase epitaxy and molecular beam epitaxy are the most commonly used methods of epitaxial thin film growth. In this chapter, we will examine the role of the chemistry, process conditions, and the reactor, that promote epitaxial growth of the semiconducting thin film.
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