Abstract
Networked nanographite (NNG) was grown by using photoemission-assisted plasma enhanced chemical vapor deposition (CVD) on SiO2 (90 nm) /Si substrates and the career gas dependence of electric resistivity, chemical configuration, and grain size was investigated from Raman spectroscopy, SIMS, and four probes method. In this study, CH4/Ar and CH4/H2 gases were used. NNG with the thickness from 2∼60 nm was grown by changing the growth period. Resistivity of thin films showed clearly decreases in CH4/H2 in an order of magnitude nevertheless their grain sizes were almost same at the length of 9 nm. From SIMS measurement, hydrogen concentration of the sample grown by CH4/H2 was 3 times less than that of by CH4/Ar. From these results, it is found that hydrogen termination at grain boundary is the cause of low electric conductivity, and H radicals in CH4/H2 plasma may remove the terminated hydrogen by H abstraction reaction in CVD process.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
