Abstract
CVD on metal substrates has been provn effective in the synthesis of graphene. But before application in graphene electronics, the quality of the synthesized graphene needs to be improved. Therefore a reliable method to grow large-scale, highquality graphene is required. Besides, the mechanism of graphene growth is not fully understood. Here we report utilizing CVD to produce monoand bi-layer graphene from ethanol. By using ethanol as carbon source, we carefully studied the CVD parameter for the growth process, and their effects on the defects and grain size of graphene. By changing growth condition we were able to efficiently control the layer number (1 or 2). We also employed C, C, and 13CH3CH2OH ethanol to synthesize graphene, and based on the spectroscopy results we are able to explain the growth mechanism on Cu and Ni substrates.
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