Abstract
The growth of nanowires (NWs) at a lower precursor temperature of were investigated using a cost-effective chemical vapor deposition (CVD) method at growth temperatures of . Different reactants for CVD precursors were tested, and the only successful reactant for growing NWs was the mixture. The structure and crystallography of NWs was characterized by selected-area diffraction and high-resolution transmission electron microscopy. It is proposed that the effective precursor formed by the reaction between indium and is able to dissociate and dissolute into gold catalysts for the purpose of growing CVD nanowires via the vapor-liquid-solid growth mechanism, but only is difficult to do and is easily oxidized to form crystals instead of NWs.
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