CVD growth of 3C-SiC layers on 4H-SiC substrates with improved morphology

Abstract

Chloride-based CVD growth of 3C-SiC epitaxial layers on on-axis 4H-SiC substrates has been studied using chloromethane and silane as precursors. Hydrogen chloride is utilized as additional chlorine source. Process parameters, such as growth temperature, C/Si ratio, Cl/Si ratio and temperature ramp-up condition, are investigated. Smooth 3C-SiC layers without DPB defects on the surface could be obtained with optimized process at a growth rate of 14 μm/h. Low temperature photoluminescence measurement shows sharp near bandgap emission, which verifies the good optical properties of the epitaxial layer. The growth window is wide in this process by using chlorinated precursors compared to the standard chemistry.