Abstract
Conductive graphitized grooves on the dielectric surface of diamond have been created by KrF excimer laser radiation. The advantages of such a circuit board in high-field applications is rather limited because the crystal surface has a relatively low electrical breakdown threshold. To increase the electrical strength, a method of encapsulating surface conductive graphitized structures by chemical vapor deposition of an epitaxial diamond layer has been proposed and realized. The quality of the growth diamond is proved by Raman spectroscopy. A comparative study of the electrical resistivity of graphitized wires and the breakdown fields between them before and after diamond growth was carried out. The proposed technique is crucial for diamond-based high-field electro-optical devices, such as THz photoconductive emitters.
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