CVD diamond-SiC composite films: Structure and electrical properties

Abstract

Thin films of microcrystalline diamond-silicon carbide composite have been deposited by microwave plasma chemical vapor deposition (CVD) in methane-silane-hydrogen gas mixtures on Si substrates with an insulating polycrystalline diamond buffer layer. The structure and phase composition of the films were characterized by scanning electron microscopy, Raman and photoluminescence spectroscopy. The silicon carbide grains are identified to be cubic polytype 3C-SiC with only a minor admixture of hexagonal 6H-SiC. The measured electrical resistivity of the films is found to decrease with the temperature from ~10−1 Ω·cm at 300 K to ~10−2 Ω·cm at 460 K, with activation energy Ea = 0.20 eV. The conductivity is assumed to be realized via pathways in the SiC network immersed in isolating diamond matrix. The obtained results show that such diamond/SiC composites may be considered as an alternative to electrically conductive nitrogenated ultrananocrystalline diamond films for a number of practical applications.