Abstract
A p-type diamond Schottky barrier diode (SBD) on homoepitaxial CVD diamond is presented. The technologic steps required to carry out the experimental device are described in this paper. The B-acceptors concentration and the barrier height have been extracted from C– V measurements leading to Ns ∼ 1.2 × 10 17 cm − 3 and Φ Β = 1.8 eV respectively. The current–voltage experimental measurements performed at room temperature have shown high current density in the range of 900 A/cm 2. However, the breakdown voltage of the device was limited to 25 V, this low reverse value suggest the presence of a large defect density in the bulk.
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