Abstract

This paper discusses CVD Cu process development and back-end dual-inlaid integration of CVD Cu on sub-0.25 /spl mu/m device structure. CVD Cu was deposited on a variety of barriers, including CVD TiN, PVD Ta, PVD TaN and a hybrid barrier, using a direct liquid delivery (DLI) system. Excellent step coverage and via/trench filling were observed. Low sheet resistivity and low contact resistance have been obtained through a CVD/PVD reflow process using CVD TiN and hybrid barriers. The extendability of the CVD Cu based process technology is also discussed.

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