Abstract
To reduce resistivity of interconnect, to enhance electromigration life time, and to improve a step coverage of barrier layer, cobalt and cobalt-tungsten alloy film was deposited by chemical vapor deposition (CVD) or atomic layer deposition (ALD) using octacarbonyl dicobalt (Co 2 (CO) 8 ) and biscyclopentadienyl cobalt (Cp 2 Co) as precursors, respectively. We demonstrated to form conformal cobalt films on to trench pattern and we confirmed that CVD/ALD cobalt-tungsten films have good barrier properties against copper diffusion.
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