Abstract
PVD has usually poor step coverage control for high aspect ratio structures due to its high sticking coefficient and line of sight deposition characteristics. This study presents a novel PVD system, Eni-PVD, reporting customized step coverage with minimal overhang for copper seed layer. Energetic neutrals and ions controlled independently appear to have different angular flux distribution and show customized step coverage with proper mix. The technology can be effective to reduce RC delay through higher aspect ratio interconnect. It is capable of the Cu seed layer and barrier sputter deposition for 45 nm and beyond based on its critical minimum sidewall barrier/cladding thickness assessment. It can also be applied to other PVD areas where fine topography control is required.
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