Abstract

The ever-increasing presence of electronic devices and communication equipment imposes a critical demand for the development of highly efficient microwave absorption materials, as a means to combat the detrimental effects of electromagnetic (EM) wave pollution. The extraordinary advantages offered by heterointerface and defect engineering, coupled with their distinctive electromagnetic traits, infuse boundless energy into the development of MXene-based absorbers for EM attenuation. However, there is still a lack of understanding regarding the consequences of irreversible oxidation on the surface chemistry and dielectric properties of MXenes. Through the employment of heterointerface engineering strategy to promote interfacial charge accumulation and polarization, remarkable EM absorption properties coupled with corrosion resistance have been realized. The partially oxidized MXenes, particularly Ti3C2Tx and V2CTx, displayed remarkable reflection loss (RL) values of −56.83 dB and −52.13 dB, respectively. Additionally, the Nb2CTx composites showcased exceptional performance, offering a significantly broader bandwidth of 9.84 GHz. By conducting an extensive examination of the structural changes in MXenes, this work aims to elucidate the oxidation mechanisms and proposes a feasible method for producing MXenes with excellent absorption properties.

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