Abstract
Two types of non-standard relaxation induced impurity photoconductivity (IIP) observed in photoconductors CdS, ZnSe, GaAs and others, depending on the kinetic characteristics of the traps are described. In one case, at the stage of post flashing monotonic decay which is typical for relaxation associated with slow traps (the ratio of the speed of the electron capture to the recombination rate (R > 1): measurement alternating signal (f > 20 Hz) relaxation curves take the form of curves usual impurity photoconductivity. Electronic processes responsible for relaxation of non-standard IIP are analyzed. For example, fast-centers, which include the characteristic A II B VI donor Ag i 0 , for the first time in semiconductors experimentally, investigated the dependence of the cross section of electron capture by traps energy released during localization.
Highlights
Ключевые слова: индуцированная фотопроводимость, электронная ловушка, центр рекомбинации, энергия ионизации, сечение захвата, оптически активная ловушка, фотоионизация, макронеоднородности
At the stage of post flashing monotonic decay which is typical for relaxation associated with slow traps (the ratio of the speed of the electron capture to the recombination rate (R
Relaxation of the second type characterized by rapid photoelectric traps (R >> 1): measurement alternating signal (f ≥ 20 Hz) relaxation curves take the form of curves usual impurity photoconductivity
Summary
Ключевые слова: индуцированная фотопроводимость, электронная ловушка, центр рекомбинации, энергия ионизации, сечение захвата, оптически активная ловушка, фотоионизация, макронеоднородности. Описаны два типа нестандартных релаксаций индуцированной примесной фотопроводимости (ИПФ), наблюдаемых в фотопроводниках CdS, ZnSe, GaAs и др.) в зависимости от кинетических особенностей ловушек. В состав которых входит характерный для AIIB VI донор Agi0, впервые в полупроводниках экспериментально исследована зависимость сечения захвата электронов ловушек от энергии, выделяемой при локализации. Two types of non-standard relaxation induced impurity photoconductivity (IIP) observed in photoconductors CdS, ZnSe, GaAs and others, depending on the kinetic characteristics of the traps are described.
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