Abstract
The principal parameters of the current-voltage characteristics of silicon planar thyristors are calculated taking into account the recombination, generation, and avalanche multiplication in p-n junctions. Analytic expressions are obtained for the determination of the turn-off current, critical gate current, and turn-off gain of an asymmetrical silicon planar thyristor. The dependence of the turn-off current on the gate current and the dependence of the turn-off gain on the anode current are calculated. Allowance is made for the avalanche multiplication of carriers in the central p-n junction and analytic expressions are derived for the turn-on current and the breakover voltage. It is shown that the breakover voltage of planar thyristors designed for low-voltage operation is close to the breakdown voltage of the central p-n junction, which is due to the low value of the leakage current of this junction.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
