Abstract
Current–voltage properties along the c-axis of high-resistive Ni-doped zinc oxide (ZnO) thin film were examined. Zinc oxide thin film capacitor with Al/Ti top and bottom electrodes was fabricated on SiO 2/Si substrate. Current saturation due to acoustoelectric effect in piezoelectric ZnO thin film was observed. The current saturation indicates that the drift velocity of electron reaches the sound velocity of ZnO and the electron mobility of ZnO along the c-axis was estimated to be 1–3 cm 2V −1 s −1. The electric field where the current saturates depended on the direction of the applied field and the internal residual stress in ZnO thin film, which indicate that the polarity of ZnO thin film deposited on Al/Ti is negative.
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