Abstract
An analytical solution for the current-voltage characteristics of a metal-semiconductor contact with a Mott barrier is derived with allowance made for the space charge of carriers in the n+-i junction. The main assumption used in solving the Poisson equation is that the bulk doping of the i layer is ignored. The dependences of the electric current on the voltage are calculated for the characteristic cases of the thermionic emission and diffusion mechanisms of charge transfer. In contrast to the classical Mott result, the inclusion of the space charge of carriers in the calculation limits the increase in the electric current at a forward bias and decreases the nonlinearity of the current-voltage characteristics.
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