Abstract
The current–voltage ( I– V) characteristics of single- and poly-crystal alumina and aluminum nitride (AlN) were measured at temperatures ranging from room temperature to 723 K with or without 1 MeV electron irradiation in a high voltage electron microscope (HVEM). Both alumina and AlN specimens exhibit non-ohmic I– V characteristics without irradiation. The I– V characteristics in alumina, however, change from non-ohmic to almost ohmic under electron irradiation. But the I– V characteristics in AlN is still non-ohmic under irradiation. There are remarkable differences in I– V characteristics between the alumina and AlN specimens. The non-ohmic behavior is due to the electronic barrier formed near the interface between the titanium electrode and the alumina or AlN specimen. No bulk and surface radiation induced electrical degradation (RIED) was found in AlN up to 1.5×10 −5 dpa.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
