Abstract
The problem of drifting charge-induced currents is considered in order to predict the pulsed operational characteristics in photo- and particle-detectors with a junction controlled active area. The direct analysis of the field changes induced by drifting charge in the abrupt junction devices with a plane-parallel geometry of finite area electrodes is presented. The problem is solved using the one-dimensional approach. The models of the formation of the induced pulsed currents have been analyzed for the regimes of partial and full depletion. The obtained solutions for the current density contain expressions of a velocity field dependence on the applied voltage, location of the injected surface charge domain and carrier capture parameters. The drift component of this current coincides with Ramo's expression. It has been illustrated, that the synchronous action of carrier drift, trapping, generation and diffusion can lead to a vast variety of possible current pulse waveforms. Experimental illustrations of the current pulse variations determined by either the rather small or large carrier density within the photo-injected charge domain are presented, based on a study of Si detectors.
Highlights
The drifting charge-induced current is often a prevailing component in detector signals
The Sensors 2013, 13 problem of the charge-induced currents remains a sophisticated issue in more complicated situations of photo-and particle-detectors when devices operate in partial or full depletion regimes with a complex field distribution in the presence of carrier capture-generation
The description of the current pulse shape for the large injected charge drift in a finite area detector is coincident with that derived for the correlated drift (Ramo’s-type) expressions
Summary
The drifting charge-induced current is often a prevailing component in detector signals. The solutions obtained [9,10] for the estimation of the induced current on an arbitrary electrode provide no practical relevance of application with regard to semiconductor devices, as pointed out in [10], when the real velocity field of the charge domain is not known, and it should be evaluated by means of the complete analysis of field distribution. To simplify the understanding of applied models, the single type of induced surface charge domain motion is initially considered This simplification can be sufficient to model current transients due to highly absorbed photons or alpha-particles in Si detectors, while the generalization for a bipolar charge domain is discussed. Currents (ICDC) are revealed within analysis of the simulated ICDC transients and highlighted in illustrations of the experimental characteristics, measured on Si pin diodes
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