Abstract
We present a theoretical analysis based on self-consistent numerical simulations of current-driven interactions between voids in metallic thin-film interconnects and the resulting void migration, morphological evolution, and coalescence phenomena. The analysis reveals the complex nature of electromigration-induced void-void interactions, and their implications for the evolution of interconnect line electrical resistance. Most importantly, it is demonstrated that current-driven void-void interaction effects, such as void coalescence, can cause sudden changes in the interconnect line electrical resistance, in qualitative agreement with observations in accelerated electromigration testing experiments.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
