Abstract
Si/SiC hybrid switch comprises the Si IGBT and SiC MOSFET, which have been verified to be a high-efficiency costeffective device in the application of the single-phase inverter. However, the constant switching pattern (SiC MOSFET turns on earlier and turns off later) cannot decrease the narrow pulses of the Si IGBT and improve the overload capability of the Si/SiC hybrid switch, which affects the reliability of the single-phase inverter. In order to further improve the reliability of the single-phase inverter, a current-dependent variable switching strategy combining the high freedom of the Si/SiC hybrid switch and variable switching frequency is proposed. The switching pattern and switching frequency are changed according to different fundamental current levels, which is aim at improving the reliability of the switching devices. Meanwhile, the switching loss can be reduced while the current ripple of inverters remains unchanged. In addition, the narrow pulses of the Si IGBT near the zero-crossing point can be also eliminated. Experimental results verify the feasibility of the proposed switch strategy.
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