Abstract
High-field carrier transport properties probed by pulsed current-voltage characteristics in n-type GaN epilayers have been investigated at room temperature. The threshold electric field of the Gunn effect is experimentally determined to be about 400 kV/cm with an electron peak velocity of about 1.9×107 cm/s. The current-controlled negative differential resistance effect induced by the Gunn-type instability in n-type GaN is observed, which takes the early electric breakdown of the GaN epilayers in charge.
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