Abstract

The effect of the substrate-pad physical properties (surface roughness and hardness) on the current-carrying capacity of anisotropic-conductive film (ACF) joints is investigated in this work. Flip chips with Au bumps were bonded to the flexible substrates with Au/Cu and Au/Ni/Cu pads using different bonding pressure. It was found that the current-carrying capacity of ACF joints increased to a maximum value with the rise of the bonding pressure; then, it reduced if the bonding pressure continually increased. The maximum average value per unit area of Au/Ni/Cu pad and Au/Cu pad ACF joints is about 93 µA/µm2 and 118 µA/µm2, respectively, at 100-MPa bonding pressure. The variation trend of connection resistance is the opposite of current-carrying capacity. The variation of current-carrying capacity (or connection resistance) of Au/Cu pad joints is larger than that of Au/Ni/Cu pad joints. The current-carrying capacity is related to the variation of the resistance of ACF joints. The connection resistance of ACF joints depends primarily on the particle constriction resistance (Rcoi), Rcoi ∞ 1/a, where “a” is the radius of contact spot. A smaller contact area results in larger joule heat generation per unit volume (Qg), Qg ∞ 1/a4, which preferentially elevates the temperature of the constriction. The raised temperature increases the resistance because of the temperature-dependent coefficient of the metal resistivity. The theory of tribology is used to explain the difference between Au/Cu pad and Au/Ni/Cu pad ACF joints. For the Au/Cu pad ACF joints, the deformation of the particles’ upper and bottom sides is nearly symmetrical; the contact between conductive particles and pad has the character of “sliding contact,” especially under high pressure. For the Au/Ni/Cu pad ACF joint, the contact between particles and pad determined the conduction characteristics of ACF joints. It has the character of “static contact.” Thus, the current-carrying capacity (or connection resistance) of Au/Cu pad joints is more sensitive to the bonding pressure.

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