Abstract
Mo/γ-In2Se3/ZnO : Al diode structures have been grown by vacuum deposition. In order to study the influence of the ZnO : Al electrode on the diode properties, ZnO : Al conductive and insulating films have been deposited by rf magnetron sputtering using a single Al2O3 doped ZnO target. These films have been characterized before their use in diodes. The electrical properties of ZnO : Al are controlled by the oxygen partial pressure during deposition. The effect of the composition on the I–V characteristics of γ-In2Se3 based diodes has been investigated. When γ-In2Se3 is doped with manganese there is no photovoltaic effect while there is when it is pure. It is shown that the I–V curves agree with Schottky theory only in the case of pure γ-In2Se3. When it is doped the I–V curves agree well with the trap-controlled space charge limited transport theory, which is attributed to the presence of a band of localized states present in the band gap of γ-In2Se3 after Mn doping.
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