Abstract
Experimental results on the dramatic changes in the current-voltage ( I– V) characteristics of heavily irradiated AuGaAs contacts are presented. These results are examined in relation to the unirradiated and medium-level-irradiated contacts. Reasons for the observed changes are advanced and related to Lampert's theory regarding single carrier injection into an insulating region with traps. It is shown that despite the apparent disordering of the substrate, square law devices may be realized at suitable temperatures. By varying the temperature between 210 K and 310 K, other power laws are realized.
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