Abstract
AbstractResonant tunnelling diodes of cubic Al(Ga)N/GaN were grown by plasma assisted molecular beam epitaxy on 3C‐SiC (001). We observe a pronounced negative differential resistance at about 1.2 V with a peak‐to‐valley ratio (PVR) of 1.3 to 2.7 at room temperature. Experimental data is in good agreement with calculated I–V curves showing only a small deviation of 0.3 V of the resonance peak voltage. We find a decrease of the PVR when the I–V characteristic is measured repeatedly with short time intervals between the voltage‐cycles. However, the I–V characteristics can be recovered fully when the diodes are illuminated by UV‐light indicating charge trapping in our devices. Mesa structures are prepared by reactive ion etching. The size of the top ohmic contacts is (25 × 11) µm2. The Al content of the barrier material is varied between 30% and 100%.
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