Abstract
A simple method for developing a Schottky IR sensors consisting of metal (pt)- semiconductor (Si-p) is demonstrated in this work. PtSi/Si-p structure is formed by depositing platinum layer over cleaned Si surface using e-beam and embedded by Copper thin film. Current-voltage (I-V) characterization of PtSi/Si with and without copper is made at 77 K. The I-V measurements are made in the presence and absence of electromagnetic wave with infrared source. The result shows a significant increase in photocurrent and higher sensitivity in copper embedded PtSi/Si structure comparing to the conventional PtSi/Si structure. The CuPt layer created over the PtSi layer increases the PtSi sensitivity by trapping infrared radiation. This sensor with small size and high sensitive for IR radiation can be utilized in infrared imageing sensors, nanoplasmonics and nano-Photonics elements.
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