Current–voltage characteristics of Al/Rhodamine-101/ n-GaAs structures in the wide temperature range

Abstract

The forward bias current–voltage ( I–V) characteristics of Al/Rhodamine-101/ n-GaAs structure have been investigated in the temperature range of 80–350 K. It has been seen a decrease in ideality factor ( n) and an increase in the zero-bias barrier height (BH) with an increase in temperature. It has been seen that such a behavior of the BH and n obey Gaussian distribution of the BHs due to the BH inhomogeneities at the metal/semiconductor (MS) interface. The very strong temperature dependence of ideality factor of the structure has shown that the current processes occurring in the organic layer at the MS interface would be a possible candidate such as trap-charge limited conduction in determining the current at the intermediate and high bias regimes. Furthermore, it has been show that the Rh101 can be used to vary effective BHs for the metal/GaAs Schottky diodes. As a result, it has been determined that the BH value for conventional Al/ n-GaAs SBD is remarkably higher than our own values of 0.68 eV obtained for the Al/Rh101/ n-GaAs at 290 K.