Abstract
A Ag:Y Ba2Cu3O7−δ/SrNb0.01Ti0.99O3 bilayer structure was fabricated by pulsed-laser deposition. Current–voltage(I–V) dependence measurements of the bilayer were carried out in the temperature range5–250 K with variation of magnetic field from 0 to 50 kOe. Schottky junction behaviour wasobserved at temperatures higher than the critical temperature of superconductivity(Tc) due to the n-typesemiconductor SrNb0.01Ti0.99O3 and themetallic conductivity of Y Ba2Cu3O7−δ.At temperatures lower than Tc, the bilayer becomes a degenerate heterostructure p–n junction. TheI–V characteristic shows a sequence of current steps at forward voltage andan oscillation character at backward voltage. Energy diagrams of theAg:Y Ba2Cu3O7−δ/SrNb0.01Ti0.99O3 bilayer structure have been proposed to explain the peculiarI–V characteristics.
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