Abstract
The forward current-voltage (If-Vf) characteristics of (50 wt% Ni– 50 wt% Pt) silicide Schottky diodes, formed in vacuum at 425 °C from rf sputter-deposited Ni and Pt thin films, were found to be dependent on the metal-deposition sequence. From the thermionic emission equation an empirical barrier height of 0.70 eV was calculated for diodes formed from 125 Å Pt/325 Å Ni/(111) Si, while diodes formed from 325 Å Ni/125Å Pt/(111) Si had an empirical barrier height of 0.65 eV. The deposition of a thin W-Ti diffusion marker film on the Si surface before sputter deposition of Ni and Pt layers modified If-Vf characteristics. Silicide diodes formed from 125 Å Pt/325 Å Ni/(W-Ti)/(111) Si had an empirical barrier height of 0.66 eV. Diodes formed from 325 Å Ni/125 Å Pt/(W-Ti)/(111) Si had an empirical barrier height of 0.70 eV. MeV 4He+ backscattering spectra revealed that diodes with similar If-Vf characteristics had similar Ni and Pt concentration profiles in the silicide film.
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