Abstract
The GaAlAsSb/GaSb is an interesting system for optoelectronic device technology and particularly for the preparation of lasers and photodetectors. The current-voltage characteristic of Ga 0.53 Al 0.47 As 0.04 Sb 0.96 (p)/GaSb(n + ) heterojunctions, obtained by liquid phase epitaxy on GaSb substrate, is studied. The current of the heterojunction, which is essentially a thermoionic emission of holes, has a behavior identical to that of the Schottky diode, allowing to derive the barrier height V b = 685 meV for this heterostructure. The Richardson constant of the system is calculated to be 49.1 A cm -2 K -2 . The band offsets at the interface are determined as ΔE c = 460 meV, ΔE v = 128 meV, in agreement with other works. The variation of the valence band offset with Al composition shows a good agreement with the theoretical models proposed by Jaros and Mujica.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
