Abstract
Various pseudomorphic High Electron Mobility Transistor (pHEMT) structures of AlGaAs/InGaAs alloys have been observed their current–voltage behavior. The tungsten probes were used for a measurement the structures by ramping the voltage from −5 to 5 V and measure the electrical current. Measurement was carried out at room temperature and also under optical illumination. From the measurement, the electrical current was found to increase as the increase of Al content in the AlGaAs alloys layer in the pHEMT structure. This phenomenon was supported by the decrease of sheet resistance as obtained from Hall effect measurement. Under visible light illumination, the current–voltage behavior of pHEMT structure was observed to vary as the light power density was varied for 0, 25 and 55 μW/cm.
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