Abstract
The authors report the use of chemically modified indium tin oxide (ITO) with different binding groups (–COCl and –PO2Cl2) of p-chlorobenzene derivatives forming effective monolayers to control the work function of ITO and hence to enhance the hole injection. The enhanced hole injection is studied by measuring current density–voltage (J-V) characteristics. The behavior of J-V characteristics caused by varying the ITO work function in hole-only single-carrier devices with a hole transport layer of N,N′-diphenyl-N,N′-bis(3-methylphenyl)-1,1′-biphenyl-4,4′-diamine is examined. Upon grafting with p-chlorophenylphosphoryl dichloride, the J-V characteristics show a space-charge-limited conduction behavior. Such modified ITO anodes lead to improvements in the device properties.
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