Abstract
In this work, the analysis of electrical properties Au/n-Ge10Se80In10/p-Si/Al heterojunction is studied. The dark forward current–voltage characteristics showed a thermoionic emission mechanism at low voltages (V≤0.4V) followed by a SCLC mechanism at high voltages (V≤0.5V). The junction parameters like series resistance, rectification ratio, ideality factor, effective barrier height, and total trap concentration were determined. The capacitance–voltage (C–V) characteristics of n-Ge10Se80In10/p-Si devices were also investigated. The barrier height value obtained from the C–V measurements was found to be 0.56eV. Solar cell parameters were also evaluated under illumination of 6mW/cm2 and the power conversion efficiency was estimated as 1.5%.
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