Abstract
An investigation of metallic polypyrrole polymer (MPP)/ n-InSe(:Er) (by an anodization process) Schottky barrier diodes (SBDs) fabricated on a cleaved n-type InSe(:Er) substrate, which is a layered semiconductor, has been made. The metallic polypyrrole film provides a good rectifying contact to the n-InSe(:Er) semiconductor. The current–voltage ( I– V) and capacitance–voltage ( C– V) characteristics of the diode have been determined at room temperature. The diode shows nonideal I– V behavior with an ideality factor greater than one. In addition, the I– V characteristics of the (MPP)/ n-InSe(:Er) device shows an improvement with an increased Φ b0 and a decreased ideality factor after the polymer melt processing step. The reverse bias C −2– V characteristics of the diode shows a non-linear behavior.
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