Abstract
Measurements of the forward current characteristics and the barrier heights of Schottky barriers on chemically etched low-doped n-InSb surfaces have been performed. The barrier height determined from the 1 C 2 versus V plot is in good agreement with the value from the thermal activation energy, while the barrier height obtained from the saturation current deviates to a great extent. The difference can be seen to correlate with the ideality factor of the forward I–V characteristics. This irregular behaviour is attributed to the presence of a thin interfacial dielectric layer and to an ideality factor due to the Shockley-Read-Hall (SRH) controlled occupation of the interface states.
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