Abstract
Current transport in a-Si based n/p (‘‘tunnel’’) junctions is investigated using current-voltage- temperature and quantum efficiency measurements. Currents are nearly ohmic and temperature independent under typical solar cell operating conditions. Incorporating a thin a-Si(B) p+ layer between the n and p layers and replacing either a-Si layer with a microcrystalline layer improves the device by reducing the resistance and increasing the recombination. Light soaking improves the devices slightly. These results are consistent with a recently proposed recombination-tunneling model. Incorporating improved interconnect junctions in tandem solar cell devices improved the initial and stabilized performance.
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