Abstract
The current transport, Fermi level pinning and transient behavior of Group-III nitride Schottky barriers are reviewed. First, an overview of interface models is given. Then, the current transport mechanism in GaN, AlGaN, and InGaN Schottky barriers is discussed. We show that discrepancy in barrier height measurements in the I-V and the C-V methods, as well as large reverse leakage currents, can be explained by using the thin surface barrier (TSB) model. This understanding has led to a large leakage reduction by using an oxygen gettering process. Finally, the transient behavior of AlGaN/ GaN planar Schottky diodes is discussed to get insight into the surface-related current collapse phenomenon in AlGaN/GaN high electron mobility transistors (HEMTs). The responses are explained in terms of the dispersive transport caused by a time-continual random walk with hopping through surface states. This provides a new understanding of the current collapse.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
