Current Transient Study of RF GaN HEMTs Biased at Quiescent Point of VDS = 28 V and ID = 100 mA/mm under Different Temperatures

Abstract

ABSTRACTThe current transient was studied on AlGaN/GaN HEMTs for RF power amplifiers under different temperatures. The current transient measurements include two different approaches. One is to measure the current transient from off-state (without bias) to a quiescent point (Q-point). Different transient behaviors were observed while switching to different Q-points. Another one is to measure the current transient from different currents to the Q-point of VDS = 28 V and ID = 100 mA/mm. The different currents before switching to Q-point of VDS = 28 V and ID = 100 mA/mm show the different transient characteristics. Most of the current transient demonstrates temperature independence in this study.