Abstract
Recently, the electrical switching of antiferromagnetic (AFM) order has been intensively investigated because of its application potential in data storage technology. Herein, we report the current switching of the AFM N\'eel vector in epitaxial Pd/CoO films as a function of temperature. Using combined measurements of Hall resistance (HR) and x-ray magnetic linear dichroism (XMLD) below and above the AFM N\'eel temperature, we unambiguously identified both magnetic and nonmagnetic contributions to the current-induced HR change. Through magnetic field-induced HR measurements, we quantitatively determined the percentage of current-induced CoO spin switching. Further, we showed that the thermal effect dominated the CoO magnetic switching more in samples with a thinner Pd layer and that samples with a thicker CoO layer required higher thermal activation for current-induced magnetic switching. These results provide a clear and comprehensive picture of current-induced AFM spin switching across the AFM N\'eel temperature.
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