Abstract
ABSTRACTThe progress that has been made in SiC diodes and GTOs is reviewed. A 100 A/1000 V SiC pi- n diode package, the highest current rating reported for any SiC device, a 69 A conduction/ 11 A turn-off of a SiC GTO and MTOTM, as well as the first all-SiC, 3 phase Pulse Width Modulated (PWM) inverter are reported, herein, for the first time. The inverter achieves voltage controlled turn off with a high temperature capable, hybrid SiC JFET. Material and process technology issues that will need to be addressed before device commercialization can be realized are discussed.
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