Abstract
We constructed a fluorescence yield X-ray absorption fine structure (XAFS) apparatus for the measurement of local structure around trace light element impurities in light element matrices. Our XAFS instrument with a 100-pixel STJ detector is now in the stage of routine operation and open to users at a synchrotron radiation facility (KEK PF). The average energy resolution of the 100 pixels is 11.8 $$\pm $$ 0.6 at 400 eV in a sensitive area of 1 mm $$^{2}$$ . As an example of functional materials, we successfully measured nitrogen K-edge XAFS spectra of a compound semiconductor, 4H-SiC, with a nitrogen dopant concentration of 300 ppm. The faint N-K line was clearly separated from the strong C-K line.
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