Abstract
Thin-film polysilicon insulated-gate field effect transistors deposited on glass substrates are the subject of worldwide research and development activity. The greatest motivation for this is their application to flat-panel displays, including, in particular, active-matrix liquid crystal displays (AMLCDs), where they offer several important advantages over the more mature amorphous silicon thin-film transistor (TFT) technology. One of these is the ready availability of both n-type and p-type poly-Si TFTs. Polysilicon-on-glass CMOS TFT technology may be used to fabricate AMLCD drivers on the display substrate; it can also be used in a variety of other applications such as printers, scanners, smart sensors and neural networks. This review identifies the major achievements and key issues in the development of poly-Si TFT technology for both display and nondisplay applications.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
