Abstract
Device-to-device parametric variations (e.g. threshold voltage V<inf>TH</inf>, gate resistance R<inf>G</inf> and junction temperature T<inf>J</inf>) can cause variations in the short-circuit currents conducted through parallel-connected devices. In this paper, the impact of variations in V<inf>TH</inf>, R<inf>G</inf> and T<inf>J</inf> on current sharing under short-circuits is investigated using measurements and electrothermal modelling. The results show that V<inf>TH</inf> is the most critical parameter affecting short-circuit current sharing and directly impacts the peak short circuit current. Variations in gate resistance do not impact the short circuit current sharing unless the variation is over 400% thereby indicating catastrophic failure of the gate wirebond. Variation in the initial junction temperature is also not as critical as variations in V<inf>TH</inf> since the higher temperature device takes less short circuit current. Electrothermal simulations of parallel connected SiC MOSFETs have been developed to analyze how V<inf>TH</inf> mismatch impacts short circuit current sharing. These simulations allow for the investigation of the impact of V<inf>TH</inf> mismatch on the electrothermal stresses of the parallel connected MOSFETs.
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