Abstract
AbstractIn LSIs with more than 1 million gates, detection of the defective locations becomes difficult. In particular, in the case of an abnormality in the standby current, excessive power is consumed even if operation is successful. Hence, it is necessary to identify the error location in order to reduce power consumption. The IDDQ test detects the error by measuring the static current in standby for each circuit block. A typical implementation is the BICS (Built‐In Current Sensor). However, the conventional method has the problems of reduction of the noise margin and degradation of the circuit speed. In this paper, two types of current sensors, the Lorentz force MOSFET (LMOS) and Hall effect MOSFET (HEMOS), based on a magnetic sensor circuit using CMOS technology, are proposed. These sensors are capable of non‐contacting and non‐disturbing current measurement. A circuit for applications to the IDDQ test is described. © 2001 Scripta Technica, Electron Comm Jpn Pt 2, 84(9): 21–27, 2001
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