Abstract
Usually, the drain-source current (IDS) increases with positive drain-source voltage (VDS) for pentacene-based organic static induction transistor (OSIT) ITO(Source)/Pentacene/Al(Gate)/Pentacene/Au(Drain) and it shows an inherent rectifying property under negative gate voltages (VG), i.e. the slope of IDS vs. VDS curve increases with VDS but without any current saturation effect. In this paper, we investigated the electrical characteristics of pentacene-based OSIT ITO/Pentacene(80 nm)/Al(15 nm)/Pentacene(80 nm)/Au under negative VDS and VG, and found that IDS changed from rectifying property to saturation effect when the magnitude of negative VDS was increased from 0 V to −6 V under negative VG, and the turn-on voltage (VON) moved to larger negative voltages when the magnitude of negative VG increased and the movement step of VON gets smaller after keeping the device for a long time, and the possible mechanisms for such a kind of current modulation were discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.