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Abstract
Electronic transport through rubrene single-crystal field-effect transistors (FETs) is investigated experimentally in the high carrier density regime (n≃0.1 carrier molecule−1). In this regime, we find that the current does not increase linearly with the density of charge carriers, and tends to saturate. At the same time, the activation energy for transport unexpectedly increases with increasing n. We perform a theoretical analysis in terms of a well-defined microscopic model for interacting Fröhlich polarons, which quantitatively accounts for our experimental observations. This work is particularly significant for our understanding of electronic transport through organic FETs.
Highlights
The use of single-crystalline material for the fabrication of organic field-effect transistors (FETs) has given, over the past few years, the experimental control needed for the investigation of the intrinsic transport properties of dielectric/organic interfaces [1]
We build on the Fröhlich model, which was used in our previous study to describe the dressing of the carriers by the polarizability of the gate dielectric [6], and find that the observed behavior can be quantitatively explained by considering the effects of the Coulomb interactions between holes
We have studied electronic transport through rubrene single-crystal FETs in the high-density regime and found new unexpected phenomena, such as a saturation of the current Isd versus Vg and an increase of the activation energy with increasing density
Summary
The use of single-crystalline material for the fabrication of organic field-effect transistors (FETs) has given, over the past few years, the experimental control needed for the investigation of the intrinsic transport properties of dielectric/organic interfaces [1] This has resulted in the observation of anisotropic transport [2], a metallic-like temperature dependence of the mobility [3], the Hall effect [4] and quasiparticle response in the infrared conductivity [5]. Following this progress, the successful quantitative analysis of experiments in terms of a simple microscopic model has recently been possible in single-crystal FETs with highly polarizable gate dielectrics [6]. Our results confirm that organic single-crystal transistors are suitable for the experimental investigation of the intrinsic electronic properties of dielectric/organic interfaces, and extend our fundamental understanding of transport in organic transistors to the high-carrier-density regime
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