Current-perpendicular-to-the-plane magnetoresistance from large interfacial spin-dependent scattering between Co50Fe50 magnetic layer and In-Zn-O conductive oxide spacer layer

Abstract

We have investigated electrically conductive indium-zinc-oxide (IZO) deposited by magnetron sputtering as spacer layer for current-perpendicular-to-the-plane giant magnetoresistance sensor devices. Spin-valves with a Co50Fe50/IZO/Co50Fe50 trilayer showed resistance-area product (RA) ranging from 110 to 250 mΩ μm2, significantly larger than all-metal structures with Ag or Cu spacers (∼40 mΩ μm2). Magnetoresistance ratios (ΔR/R) of 2.5% to 5.5% depending on the IZO spacer thickness (1.5–6.0 nm), corresponding to ΔRA values from 3 to 13 mΩ μm2, were obtained. The values of ΔRA with the IZO spacers and Co50Fe50 magnetic layers were significantly larger than those with conventional metal spacers and Co50Fe50 magnetic layers (∼1–2 mΩ μm2). The dependence of ΔRA on the magnetic layer thickness suggests that the larger ΔRA obtained with IZO spacer is due to a large interfacial spin-dependent scattering caused by the large specific resistance at the Co50Fe50/IZO interface. From structural characterization by TEM and the observed dependence of the RA dispersion on device size, the electric current flowing through the IZO spacer is thought to be laterally uniform, similar to normal metal spacers.