Abstract
By modeling the magnetotransport in disordered half metals onto a random resistor network, we have performed numerical simulations on the low-field magnetoresistance (LFMR) and the current distribution in the network. It is found that there is a close relationship between the magnitude of LFMR and the current morphology. LFMR increases with the increase of current localization. In the limit of strong disorder, a quasi-one-dimensional transport channel forms and LFMR reaches its maximum. Compared with the previous two-component (metal/insulator) percolative scenario for colossal magnetoresistance in phase-separated manganites, such a current percolation transition gives further understanding of the magnetotransport in disordered half metals.
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