Abstract
We present an experimental and theoretical study ofcurrent instability in an Al0.23Ga0.77As/In0.23Ga77As n-channel delta-doped pseudomorphic high electron-mobility transistor (HEMT).Monte Carlo simulations of the device indicated that it wasvulnerable to the formation of unusual `transverse' Gunn dipoleswhich caused sudden reductions in the drain current. Thesedipoles were also responsible for a significant number of impactionization events at higher drain potentials causing asubsequent upturn in the drain current. Our experimentalobservations of a similar device are in excellent qualitativeand good quantitative agreement with our theoretical predictionsand so provide compelling evidence for the existence of Gunninstabilities in HEMTs.
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